SQS966ENW-T1_GE3

SQS966ENW-T1_GE3

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Manufacturer Part SQS966ENW-T1_GE3
Manufacturer Vishay / Siliconix
Description MOSFET N-CHAN 60V
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Arrays
Lifecycle: New from this manufacturer.
Delivery: DHL FedEx Ups TNT EMS
Payment T/T Paypal Visa MoneyGram Western Union
DataSheet SQS966ENW-T1_GE3 PDF

Availability

InStock 725
UnitPrice $ 0.97000

SQS966ENW-T1_GE3 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

SQS966ENW-T1_GE3 Specifications

Type Description
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Rds On (Max) @ Id, Vgs:36mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:572pF @ 25V
Power - Max:27.8W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:PowerPAK® 1212-8W Dual
Supplier Device Package:PowerPAK® 1212-8W Dual

Shopping Guide

Shipping Rate
Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.

Shipping Methods
Shipping Methods

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